By Lee Dong-in
The world’s largest memory chip maker Samsung Electronics Co. unveiled its new Vertical NAND (V-NAND) flash memory with the world’s biggest storage capacity of 1-Terabit (Tb) along with next-generation solid state drive (SSD) solutions.
At the Flash Memory Summit 2017 held at the Santa Clara (CA) Convention Center on Tuesday (local time), Samsung Electronics presented its new 1-Tb V-NAND chip.
V-NAND is the flash memory technology used in data storage devices including mobile phones and digital cameras. The V-NAND in a stacked structure can provide higher single-die density than those with 2-dimensional (2D) cell-arrays, and its demand is growing rapidly along with rising applications of artificial intelligence and Internet of Things (IoT).
The company said in a statement that with the new 1-Tb V-NAND chip that boasts twice larger storage capacity than the existing 512-Gigabit (Gb) chip, it is possible to construct 2-Terabyte (TB) memory in a single V-NAND package by stacking 16 1Tb dies.
Considering that 1 Tb is equal to 128 GB, and a typical two-hour-long HD movie takes up 1.5 to 2 GB of memory capacity, about 60 to 70 movies can be stored in a single V-NAND chip.
Samsung aims to introduce the world’s largest capacity SSD applying 1-Tb V-NAND memory technology next year.
At the summit, Samsung Electronics also presented its new SSD technology, dubbed Next Generation Small Form Factor (NGSFF) SSD, which is expected to dramatically improve the memory storage capacity. With the new NGSFF SSD, four times larger memory storage capacity can be secured in the same server, so data centers and customers using the server can build more efficient system, said Samsung. The company plans to begin mass producing it in the fourth quarter of this year.
A SSD is a storage device that can replace a hard disk drive (HDD). It uses high-speed memory semiconductors such as NAND flash memory or dynamic random access memory (DRAM) chips for storage that ensure high processing speed, low heating and little noise.